74 GHz, 17.2 dBm power amplifier in 45 nm SOI CMOS

Abstract

A millimetre-wave power amplifier (PA) fabricated in 45 nm SOI CMOS is reported that achieves 17.2 dBm saturated output power at 74 GHz without power combining using a 2.2 V supply, over twice the output power of previously reported single CMOS PAs. The peak gain and PAE are 14.3 dB and 11.1%, respectively. The PA also achieves a 3 dB bandwidth of 31 GHz while occupying a small die area of 0.23 mm2.