Abstract
Grown-diffused silicon tetrode transistors are being produced which have power gains of 18-20 db at 70 mc and alpha cutoff frequencies up to 400 mc. A general description of the transistor construction is given accentuating those features which contribute to the high-frequency performance such as narrow diffused base, low collector saturation resistance, and low base resistance and collector capacity. The device specifications are presented and curves are shown depicting the distribution of parameters for pilot production transistors. Data are presented showing the variation of parameters and power gain with junction temperature for typical units.
Published Version
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