Abstract
The positive bias thermal stress (PBTS), negative bias thermal stress (NBTS) and negative bias illumination stress (NBIS) stabilities of dual gate amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin film transistors via applying different top gate voltage is concentrated in this paper. These dual gate devices show better PBTS/NBTS stress stabilities (smaller ΔVth shift) than conventional bottom gate TFT device. Additionally, these dual gate devices also exhibits better NBIS stress results than conventional bottom gate TFT device.
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