Abstract
The morphological transformation and change of composition of gold-silicon alloy at the interface between a Au thin film and a Si substrate are studied using classical molecular-dynamics analysis. The simulation employs modified embedded-atom method potential extended to the Au-Si system by Kuo and Clancy. After the system is equilibrated at room temperature, it is annealed the above eutectic temperature. We study the most stable composition and structure of Au-Si alloy at the interface.
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