Abstract
The excimer laser annealing (ELA) process is one of the important processes in Low Temperature Polycrystalline Silicon (LTPS) and the optimization of laser intensity and scan pitch in ELA process are the key technology to make good performance in OLED panel. However, the visual inspection through human eye has been used to find the Optimum ELA energy density (OPED) because of the fast inspection speed and accuracy. As the size of glass in LTPS is increasing, the need of a new inspection method has been raised. So the measurement of retardation which has been used in liquid crystals’ cell gap measuring was applied to evaluate the degree of crystallization in polycrystalline silicon(p‐Si) made from the ELA process for the first time. The origin of the retardation is estimated as a Laser‐induced periodic surface structure (LIPSS).
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