Abstract
Supplementary treatments combined with the standard Excimer Laser Annealing (ELA) process are introduced to poly-Si recrystallization. The surface condition of the poly silicon film becomes more uniform and smoother after these treatments. The variation of the current that drives AMOLED is reduced from 30% to 12%. The streak mura caused by ELA process has been greatly reduced as well. Finally, the image quality of AMOLED is highly improved.
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