Abstract
This paper presents a 60 GHz low-noise amplifier (LNA) to improve detection systems performance. The considered system is based on impulse radar technology. The LNA is designed in GaAs metamorphic High Electron Mobility Transistor (m-HEMT) technology. Three stages common source transistors are used with inductive degeneration for a good tradeoff between gain and noise. The post-layout simulation results show a noise factor of 2.06 dB and a gain of 14.5 dB at 60.2 GHz, for a power consumption of 13.5 mW. The simulated nonlinear characteristics show an IP 1dB (Input 1 dB compression Point) of -10 dBm and an IIP3 (Input third-order Intercept Point) of -4.4 dBm. The LNA occupies an area of 1.56 × 1.29 mm2.
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