Abstract
The model of transient response of SnO2 semiconductor gas sensor under modulation heating has been constructed and improved successfully to reveal the forming process of the transient response. The transient responses were estimated by carrier concentrations determined from oxygen concentrations calculated by the model. The model made clear that activation energy of the chemical reaction affected strongly to the transient response of the sensor. Calculated transient responses using activation energies determined by molecular orbital calculations had deviated from experimental results. Temperature dependency of electron mobility in SnO2 was introduced newly to the model to decrease the deviation. The deviation could be decreased 1/10 at the sum of square. New precise model of transient response have been constructed by considering the temperature dependency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
