53‐4: The path of 300 mm GaN‐on‐Si epiwafers into silicon semiconductor fabs

Abstract

We have proposed a combination of large diameter GaN‐on‐Si epiwafers and the usage of existing silicon fab equipment and processes as the ultimate solution to overcome the current cost and yield issues in micro LED display fabrication. In order to utilize the maximum benefits from such combination, in particular for the most advanced 300 mm fabs, it is crucial for the micro LED epiwafers to meet the acceptance criteria of such silicon fabs. An example for a crucial acceptance criteria is the non‐standard thickness substrates which are conventionally used to compensate for the inherent strain‐engineering issues in GaN‐on‐Si epi growth. But for 300 mm silicon fabs the standard thickness of 775 μm needs to be met. In this article, we report how ALLOS manages to achieve the crucial acceptance criteria with its 300 mm GaN‐on‐Si micro LED epiwafers.