Abstract
We have proposed a combination of large diameter GaN‐on‐Si epiwafer and high‐precision, low‐cost Si foundry processes as the ultimate solution to overcome the current cost and yield issues in micro LED display fabrication. For this purpose, it is crucial to realize GaN‐on‐Si epiwafers which not only have excellent LED performance but also possess excellent processability to be accepted in Si foundries in order to utilize the maximum benefits from such combination. Especially, non‐SEMI standard thickness substrates are typically used for GaN‐on‐Si epi growth to overcome strain‐engineering issues. This is a huge hurdle for standard foundry processes. In this article, we report how ALLOS manages to produce excellent LED performance with SEMI‐standard thickness epiwafer owing to ALLOS' unique GaN‐on‐Si epitechnology for 200 mm GaN‐on‐Si epiwafers and we report on the successful scaling to 300 mm diameter for GaN‐on‐Si epiwafers.
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