Abstract
A 5.2GHz monolithic GaAs optoelectronic receiver will be presented. It consists of an interdigitated Schottky-barrier photodiode integrated with a GaAs transimpedance amplifier. The amplifier has an enhancement driver/depletion load input stage connected to a source follower matched to 50Ω. The circuit is implemented with 0.35µm recessed-gate GaAs MESFET's. The receiver is fully DC coupled and is compatible with E/D MESFET logic circuits. We obtained a bandwidth of 5.2GHz for an effective transimpedance into a 50Ω load of 300Ω yielding a transimpedance-bandwidth product of 1.5THzΩ. We also report on a single photodiode fabricated within a 100Ω transmission line, which was measured using 1.8ps laser pulses and yielded an electrical pulse with FWHM of only 4.8ps. This corresponds to a bandwidth of 105GHz.
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