1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

V Hurm,K Kohler,K Mause,D Fritzsche,M Haupt,B Raynor,M Ludwig,M Berroth,J Rosenzweig,W Benz,T Fink,P Hofmann

doi:10.1109/iedm.1994.383258

1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

V Hurm, K Kohler + Show 10 more

https://doi.org/10.1109/iedm.1994.383258

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Publication Date: Jan 1, 1994

Citations: 1

Affiliation: Fraunhofer Institute for Applied Solid State Physics, Deutsche Telekom (Germany)

#Monolithic Optoelectronic Receiver #Monolithic Receiver + Show 7 more

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Abstract

The first 1.3 /spl mu/m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 k/spl Omega/. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s. >

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