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Abstract
By using a novel bilayer resist process, 50 nm In 0.8 GaP/In 0.4 AlAs/In 0.35 GaAs metamorphic HEMTs on GaAs substrate have been successfully fabricated with high yield and uniformity. This process has an advantage over the conventional T-gate process. After definition of the bottom layer, the top layer is exposed, which prevents widening of the bottom layer. The devices with a novel bilayer T-gate exhibited excellent characteristics such as a maximum extrinsic transconductance (g mldrmax ) of 800 mS/mm, an on-state breakdown voltage (BV on ) of 3 V, a current-gain-cutoff frequency (f T ) of 254 GHz, and a maximum oscillation frequency (f max ) of 360 GHz in spite of low indium content of 35% in the channel.
Published Version
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