Abstract
This chapter begins by describing junction diodes. It describes basic equation involved and equivalent circuit. Applications of junction diodes are possible for switches, de-modulators, rectifiers, limiters, (variable) capacitors, nonlinear resistors, level shifters, and frequency generation. Special diode types exist that are optimized for the particular application. Diode structures in integrated circuits also contain a parasitic junction. This chapter further describes bipolar junction transistor. The generic expression of bipolar transistor is used for various types of this device. The most important type is the vertical npn bipolar transistor that is available as (a) silicon-based homojunction version (npn-BJT) and (b) SiGe or III-V material-based heterojunction version (HBT). Less often employed versions are the lateral pnp (LPNP) and vertical pnp (VPNP) transistor. This chapter lays emphasis on the npn-BJT for presenting a basic theory that can be applied to the other transistor versions with few modifications.
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