Abstract

AbstractActive PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port‐to‐port isolations. A 16 dB conversion gain, IP1dB = −21 dBm and IIP3 = −11 dBm using 0.35 μm SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with −66 dB LO‐IF, −52 dB LO‐RF, and −24 dB RF‐IF isolations. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 450–451, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22152

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