5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates

Abstract

InAlGaP microcavitv LEDs on Ge substrates emitting at 640 nm with compressively strained MQW active layers have been fabricated. The external quantum efficiency for a non-encapsulated MCLED was 5.2% at 4 mA and the device emitted 1.9 mW at 20 mA and nearly 8 mW optical output power at an injection current of 100 mA.