Abstract
In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.
Highlights
Split Heterojunction Gate for Silicon carbide (SiC) is a wide bandgap material, and 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most promising semiconductors in high-power systems owing to its high breakdown voltage (BV), high critical electric field, and high thermal conductivity [1,2]
The SG-double trench MOSFET (DTMOS) has a short switching time compared with the Con-DTMOS because of the low gate charge, but the difference in the switching energy loss from the Con-DTMOS is not that much owing to poor body diode characteristics
The SHG-DTMOS shows a similar switching time as the SG-DTMOS, but it exhibits excellent body diode characteristics using the heterojunction diode, and the switching energy loss is significantly reduced by 54.84% and 44.98% compared with those of the Con-DTMOS and SG-DTMOS, respectively
Summary
Split Heterojunction Gate for Silicon carbide (SiC) is a wide bandgap material, and 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most promising semiconductors in high-power systems owing to its high breakdown voltage (BV), high critical electric field, and high thermal conductivity [1,2]. Trench MOSFETs are one of the preferred device structures because of their low specific on-resistance (Ron-sp ); a high electric field on the gate oxide and a large gatedrain capacitance (Crss ) degrade the breakdown voltage characteristics and the switching performance. To alleviate this problem, a double trench MOSFET (DTMOS) with a P+. P+ shielding region to conduct the heterojunction body diode in the forward bias condition and effectively block the reverse leakage current and high electric field in the off-state condition. All simulations were set to 1 cm of the active area, and the temperature was set to 300 K
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