Abstract
II-VI Inc and SemiSouth are combining 4H-silicon carbide (SiC) substrate production capabilities at II-VI with an advanced SiC epitaxial material growth technology developed using SiC epitaxy reactors at SemiSouth. The technology is for use in ultra-high power density electronics, next-G radars, wireless and satellite communications systems. Visit www.three-fives.com for the latest advanced semiconductor industry news
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