49.4-dB Ω 46.8 -GHz Multiple Shunt-Shunt Feedback Regulated Cascode TIA in 0.25-μm InP-HBT Process

Abstract

In this paper, we design and fabricate a regulated cascode (RGC) transimpedance amplifier (TIA) in indium phosphide (InP) heterojunction bipolar transistor (HBT) technology. The proposed TIA consists of three parts: RGC TIA core with multiple shunt-shunt feedback network, Cherry-Hooper gain stages, and output buffer configured for $50- \Omega$ calibrated on-chip terminal. The TIA, fabricated in $0.25- \mu \mathrm{m}$ InP-HBT process, occupies an area of 0.13-mm2 and dissipates 831 mW at a -3.3V supply voltage. From the measurement results, we find that the proposed TIA achieves gain of 49.4-dB $\Omega$, bandwidth of 46.8GHz.