Abstract
In this study, the difference in electrical characteristics between the front channel and the back channel of an a‐IGZO oxide semiconductor TFT was revealed, and the cause was explained as an experimental result. It was confirmed that the front channel, which has higher mobility than the back channel, has an In‐rich layer and has a relatively low trap density. In conclusion, it was clarified that the In‐rich layer of the front channel improves device stability and reliability characteristics.
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