Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method

Abstract

The mobilities of the front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors with a thin (2nm) gate oxide were compared. From front-gate split capacitance-voltage measurements, it was confirmed that the effective mobility of the front channel is lower than that of the back channel. A detailed analysis shows that this lowering strongly depends on the electron density, suggesting the presence of additional Coulomb scattering centers at the front channel.