Abstract
A new advanced low×temperature polysilicon oxide semiconductor (LTPO) technology is proposed to realize CMOS×driven activematrix organic light×emitting diode (AMOLED). The advanced LTPO technology can be used in various applications by entirely CMOS×driven circuit operation, compared to the conventional one. It can reduce power consumption and the number of channels in a driver IC. We should solve technical issues related to metal×oxide thin×film transistors (TFTs), such as depletion×mode operation and relatively low carrier mobility, to realize the advanced LTPO technology. Herein, we investigated the advantages of advanced LTPO technology and the requirements of oxide TFTs for advanced LTPO based on a 10×inch QHD display simulation.
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