48‐1: Invited Paper: Oxide Semiconductor Thin‐Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography

Abstract

We propose and present in detail the new method to enable the deep submicron channel length in oxide semiconductor thin‐film transistors with conventional lithographic tool in large‐area substrates. Up till now we succeeded in fabricating the oxide thin‐ film transistors with 60 nm channel length with the performance of ~300 µA/µm at a drain bias of 1.5 V, and gate bias of 2 V, ION/IOFF larger than 109, subthreshold swing of 100 mV/dec, and turn‐on voltage of about ‐0.47 V . We hope that our technique will contribute to open a new era as a backplane technology for transparent ultra‐high‐resolution displays such as hologram, AR, and/or XR.