Abstract
Channel length downscaling characteristics of various lateral AlGaN/GaN high electron mobility transistors (HEMTs) are simulated. Quasi‐constant‐field scaled MOS channel HEMTs show superior performance over two‐dimensional electron gas (2DEG) channel HEMTs at deep submicron channel lengths. The adverse effects of deep submicron channel length on threshold voltage, drain‐induced barrier lowering, subthreshold swing, transconductance and on‐off current ratio are seen to be much less pronounced in MOS channel HEMTs compared with 2DEG channel HEMTs. Switching capabilities of enhancement mode HEMTs at different channel lengths are evaluated and compared using a new intrinsic maximum switching frequency (fm,IG) figure‐of‐merit.
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