Abstract
In this study, we proposed the pressure sensor using the P(VDF-TrFE) based pizeo-capacitor, integrated with a dual-gate a-IGZO TFT. The a-IGZO TFTs are connected in an inverter configuration and the piezo-capacitor was connected to the floating top gate of the driving TFT. The pressure sensor generates ~ 150 mV output signals and exhibits a high degree of conformability and thus can be a good candidate for smart sensor platforms.
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