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https://doi.org/10.1889/1.1832527
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Cite Publication Date: May 1, 2003 |
Affiliation: Seoul National University
AbstractA high performance poly‐Si TFTs is fabricated by a new ELA method which employs floating a‐Si thin film structure and the effect of pre‐patterning. The proposed poly‐Si TFT exhibits high performance electrical characteristics which are high mobility of 504cm2/Vsec and low subthreshold slope of 0.337 V/dec.
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