Abstract
A 4.5–4.9-GHz-band tuneable high-efficiency GaN HEMT power amplifier has been developed to meet the demand for high-speed data-rate wireless communication systems. By applying one-eighth-wavelength, closely spaced, parallel, open-ended stubs to set a short condition at a mid second-order harmonic frequency, and by switching its condition between connected and non-connected states to change the reactance at each fundamental frequency in the amplifier output circuit, a high-efficiency operation band was successfully shifted. As a first step, the connected/non-connected state was created with bonding wires. The fabricated GaN HEMT amplifier exhibited a maximum power-added efficiency of 62% and 66%, a maximum drain efficiency of 66% and 70%, and a saturation output power of 38 dBm at 4.66 and 4.92 GHz, respectively, for each switched condition.
Published Version
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