Abstract
In this paper, we develop a novel high-throughput characterization method of crystallization temperature on a thin film library with thin film composition spread. Crystallization temperature of thin film amorphous alloy can be detected as a change of emissivity using a thermography. For this method, a particular thin film library which has temperature reference area and tantalum covered grid is proposed and fabricated by MEMS process. Here, Pd-Cu-Si thin film library is deposited using combinatorial arc plasma deposition and 107 amorphous samples are confirmed on the library by X-ray diffraction as deposition with wide distribution of Pd at.%. The thin film library is heated by IR heater with thermography monitoring and crystallization temperature of 95 amorphous samples on the library can be detected at once.
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