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https://doi.org/10.1049/el.2011.0455
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Cite Journal: Electronics Letters |  Publication Date: May 12, 2011 |
 Citations: 26 |
Affiliation: TU Dresden, Innovations for High Performance Microelectronics
A 40 Gbit/s transimpedance amplifier (TIA) implemented in 0.13 μm SiGe BiCMOS with high linearity range is presented. The TIA features 24.2 dB (65.2 dB ) gain, a bandwidth of 34.2 GHz and a power consumption of only 80 mW from a 2.5 V supply. Total harmonic distortion is less than 5 up to an input current of 1.3 mA pp .
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