Abstract
It is essential to develop ultra thin film growth technologies that offer several critical requirements; high controllability of the film thickness, high controllability of the grain orientation, low contaminants in the films, good step-coverage, uniformity of the film thickness, and flexibility of the selection of materials used for sorts and impurities. Ultra-High Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) is expected to be one of powerful methods which meet these requirements and has several advantages. The ultra-high vacuum system provides low partial pressure of H2O and O2 during growth, which avoids hydrolysis of reactive source gases and suppresses unintentional oxidation of deposited films as well as substrates. The Rapid Thermal Process (RTP) with rapid heating and quenching provides accurate control of reaction source gases, so that the incorporation of contaminants due to by-product of the reaction is suppressed. Therefore it is possible to deposit thin films with excellent quality by the UHV-RTCVD.
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