17 - Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor

Abstract

This chapter presents a study which discusses steady and transient gas flow simulation of SiGe vertical reactor. SiGe is an attractive material for advanced high-speed devices. SiGe has been applied for a base region of Hetero-Junction Bipolar Transistors (HBTs). SiGe is also useful for devices, such as SiGe gate structures, elevated source/drain structures, and strained Si channel devices. SiGe films have been formed by single wafer equipment because single-wafer equipments have achieved precise process control. A batch system is able to treat a large number of wafers at a time. However, gas flow states are complicated and it has been unknown that precise and abrupt profiles could be achieved. This chapter presents a study that analyzed the steady and transient gas flows in the batch reactor as well as found that the process conditions for sub-nanometer scale process control were available by the vertical batch reactor.