Abstract
4-(Trimethylsilyl)morpholine (TMSM) was synthesized and shown to be applicable as a precursor for plasma-enhanced chemical vapor deposition of films. The temperature depen dence of the saturated vapor pressure of TMSM was determined by tensimetry and the thermodynamic characteristics of its evaporation were calculated. Thermodynamic modeling (calculation of the "equilibrium" compositions of the condensed and gas phases) was carried out for broad ranges of temperatures (300—1200 K), pressures (10–2—10 Torr), and input gas (inert gas, H2, NH3) to precursor flow ratios (0—50). The calculation results were used to predict the composition of deposited condensed products occurring in equilibrium with the gas phase depending on the composition of the initial gas mixture and reaction conditions.
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