Abstract
N-Organylbis(trimethylsilyl)amines of the general formula RN(SiMe3)2 (R = Me3Si, Et3Ge) were synthesized by reaction of sodium bis(trimethylsilyl)amide with the corresponding trialkylsilyl(germyl) halide. Their IR, UV, and 1H, 13C, and 29Si NMR spectra were studied, and saturated vapor pressures and thermal stabilities were determined. The possibility of using the RN(SiMe3)2 compounds as precursors in chemical vapor deposition of films with specified composition was estimated by thermodynamic modeling.
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