Abstract
The effects of 4 MeV electron irradiation on electroluminescence (EL) from Au/SiO 2/p-Si and Au/Si-rich SiO 2/p-Si structures are reported. The SiO 2 and Si-rich SiO 2 films were deposited on p-Si wafers using the magnetron sputtering technique and then processed by rapid thermal annealing (RTA) at a series of temperatures. The Au/SiO 2/p-Si and Au/Si-rich SiO 2/p-Si structures were irradiated by electrons with an energy of 4 Mev and a dose rate of 8.5×10 12 cm −2 s −1 . EL intensities of the two structures as functions of the RTA temperature and electron irradiation time have been studied. For the Au/SiO 2/p-Si structure with SiO 2/p-Si annealed at 900°C, the EL intensity increased to a maximum in electron irradiation for 20 s, which is larger than that before irradiation by a factor of 3. These experimental results have been discussed.
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