Abstract
Si-rich SiO 2 films were deposited on p-Si substrates using the magnetron sputtering technique and then implanted by Si, Ge or Ar ions. Electroluminescence (EL) was observed from the semitransparent Au film/ion-implanted Si-rich SiO 2/p-Si diodes with the ion-implanted Si-rich SiO 2/p-Si annealed at 1050°C. In comparison with the Au/non-implanted Si-rich SiO 2/p-Si diode, whose EL spectrum has a main peak at 1.8 eV and a shoulder at 2.4 eV, the Au/Si-implanted Si-rich SiO 2/p-Si diode has an EL spectrum with the 1.8 and 2.4 eV peaks enhanced in intensity by factors of 2 and 8, respectively. Both EL spectra of Au/Ge-implanted Si-rich SiO 2/p-Si diode Au/Ar-implanted Si-rich SiO 2/p-Si diode have new strong peaks at 2.2 eV. The mechanisms for EL intensity enhancement and appearance of new EL peaks caused by ion-implantation are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
