Abstract
In this study, the three dimensional ZnO (3D-ZnO) nanorods were synthesized by a simple chemical solution method, which were used as photoelectrodes, and CdS QDs were deposited on the surface of the 3D-ZnO nanorods to act a light absorber by using the successive ionic layer adsorption and reaction (SILAR) method. The photovoltaic performances of the semiconductor quantum dots sensitized solar cells based on CdS QDs/3D-ZnO photoelectrodes were investigated. A maximum 5.06 mA/cm2short circuit current density and 1.03% conversion efficiency under one sun illumination has been achieved. These results demonstrate that the CdS QDs-sensitized 3D-ZnO nanorods photoelectrode has a potential application in solar cells.
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