Abstract
Due to unique properties such as hardness, or a low friction coefficient, amorphous silicon carbide films are attractive for mechanical applications. Even if plasma assisted chemical vapor deposition processes are now commonly used for the growth of such coatings, mechanisms leading to their formations are not completely understood. However, the substrate temperature is considered as one of the key-parameters for this technique. Then in order to provide an effective predictive simulation tool or to determine optimal control procedures, a 3D thermal modeling of the plasma assisted chemical vapor deposition process has to be investigated.
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