Abstract
On the benefit of the deeply development of MEMS and inertial instrument technology, the novel micro technology for positioning, navigation and timing (μΡΝΤ) becomes the substitution of GPS technology, and is the one of the most popular research area. The μ PNT unit volume can be pressed obviously by employing 3D stack technology after MEMS components are finished, and through silicon vias (TSV) technology connects the pins inside the stack with outside ones. 3D stack and TSV technology improves the reliability and high G-shock survival ability of μPNT unit. The silicon on glass (SOG) style is one of the most common structure for MEMS sensor, and the special TSV technology aimed at SOG is researched in this paper to support the SOG structure based μPNT unit.
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