Abstract
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications. However, there is a lack of model to accurately evaluate the avalanche breakdown performance in nanowire SPAD with a spatially non-uniform electric field. In this work, we have developed a three-dimensional (3D) Simple Monte Carlo statistical model for GaAs nanowire SPADs. Model validation includes ionisation coefficients of GaAs and avalanche gain in GaAs nanowire avalanche photodiode. We also apply our model to predict the device performances of breakdown probability, mean time to breakdown and timing jitter, which are essential parameters for SPAD design. Simulating a PN junction GaAs nanowire SPAD design using our model, we found that device performances have little dependence on the primary carrier injection type, but the nanowire doping concentration requires optimization for high performance SPAD design and operation.
Highlights
Single photon avalanche diodes (SPADs), known as Geiger-mode avalanche photodiodes (APDs), operating at near infrared wavelength are vital optical components used for various applications, such as time-resolved photon counting [1], light detection and ranging (LIDAR) [2], and quantum key distribution [3]
We have developed a three-dimensional (3D) Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode (SPAD)
Simulating a PN junction GaAs nanowire SPAD design using our model, we found that device performances have little dependence on the primary carrier injection type, but the nanowire doping concentration requires optimization for high performance SPAD design and operation
Summary
Single photon avalanche diodes (SPADs), known as Geiger-mode avalanche photodiodes (APDs), operating at near infrared wavelength are vital optical components used for various applications, such as time-resolved photon counting [1], light detection and ranging (LIDAR) [2], and quantum key distribution [3]. Random Path Length model [12] is more accurate than the conventional local model in a statistical way, but it relies critically on accurate descriptions of the ionization path length probability density functions (PDFs) as input parameters These PDFs are difficult to parameterize when the electric field is rapidly changing, making it useful only in devices with near constant electric fields. Simple Monte Carlo (SMC) statistical model has been benchmarked extensively with experimental data on impact ionization for Si bulk APD [14] and SAPD [15] on one-dimensional (1D) simulation It contains far less band structure details compared to full band Monte Carlo model, and includes carrier scattering mechanism (including impact ionization) updated on a femtosecond timescale, so that it can handle highly non-uniform electric field [15] with shorter simulation time. Device structure with PN junction is evaluated with our model Both effects of varying the nanowire doping concentration and the primary carrier injection type are investigated
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
