3D scaling for insulated gate bipolar transistors (IGBTs) with low V&lt;inf&gt;ce(sat)&lt;/inf&gt;

Kazuo Tsutsui ,K Satô ,Munetoshi Fukui ,Hitoshi Wakabayashi ,Akira Nakajima ,Takuya Saraya ,Hiromichi Ohashi ,Wataru Saito ,Kazuo Itou ,Toshihiko Takakura ,Tomoko Matsudai ,Shin Ichi Nishizawa ,Iriya Muneta ,Kuniyuki Kakushima ,Masaharu Kobayashi ,Toshiro Hiramoto ,Yohichiroh Numasawa ,Ichiro Omura ,Takuya Hoshii ,Shinichi Suzuki ,Atsushi Ogura ,Hiroshi Iwai

doi:10.1109/asicon.2017.8252681

Abstract

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, — V ce(sat) reduction from 1.70 to 1.26 V — was experimentally confirmed for the 3D scaled IGBTs.

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