Abstract
3D Resistive Ram (ReRAM) technology exhibits the best attributes to suit present and emerging non-volatile memory storage applications. However, the major challenge to make ReRAM work in a 3D crossbar array is the integration of a selector device with a ReRAM device. The selector device will need to solve the so called “sneak path” barrier and enable large density memory arrays with low power consumption. Here, we report a Field Assisted Superlinear Threshold (FASTTM) Selector technology that overcomes the sneak path barrier with a selectivity ratio of 10E10. The switching and recover speed, on/off ratio, switching slope, program, erase, and read endurance, and variability of the FASTTM selector will be discussed. Prototype 1S1R devices with the FASTTM selector integrated with a low current ReRAM cell have been demonstrated and characterized. Figure 1 shows the representative I-V characteristics of a ReRAM cell with integrated FASTTM selector.
Published Version
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