3D Heterogeneous Integration Technology for Al System

Abstract

Novel 3D heterogeneous integration technologies using self-assembly have been developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled on a carrier wafer with a high alignment accuracy making use of liquid surface tension. The self-assembled dies on the carrier are simultaneously transferred to another wafer or interposer wafer by electrostatically de-bonding the carrier wafer after Cu nano-pillar hybrid bonding of self-assembled dies. These liquid surface tension technologies have been also applied for massively parallel self-assembling of known good dies (KGDs) on large-area substrates such as glass panels and rigid/flexible organic substrates. Three kinds of 3D heterogeneous integration technologies with large-area substrates, face-down self-assembly/direct stacking with via-middle TSVs, face-down self-assembly/direct stacking with via-last TSVs, and face-up self-assembly/transfer stacking with via-last TSVs, are demonstrated. In addition, a new TSV formation methodology based on advanced Directed Self-Assembly (DSA) with nanocomposites consisting of nano metal particles and block-co-polymers is proposed. Cylindrical nano-ordered structures with metal which act as nano-TSV are formed in Si deep holes through phase separation of polystyrene-block-poly methyl methacrylate polymers (PS-b-PMMA). These new self-assembly technologies have been applied to develop new heterogeneous 3D LSIs for Al including neuro LSIs. New cyclic neuro LSI will be presented.