Abstract
In this paper, we demonstrate a facile route to synthesize a continuous film of WS 2 deposited by a combination of aerosol -assisted chemical vapor deposition (AACVD) with H 2 free atmospheric pressure CVD technique. This synthesis strategy allows us a direct integration of the sensing material onto the sensor transducer with high growth yield and uniform coverage. SEM and Raman spectroscopy were used to investigate the morphology and composition of the grown material. The performance of WS 2 sensor in the detection of H 2 S has been studied and results show that the synthesized material behaves as a p-type semiconductor with high sensitivity towards H 2 S at sub-ppm level.
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