Abstract
A proposed new architecture for solid-state radiation detectors using a three-dimensional array of electrodes that penetrate into the detector bulk is described. Proposed fabrication steps are listed. Collection distances and calculated collection times are about one order of magnitude less than those of planar technology strip and pixel detectors with electrodes confined to the detector surface, and depletion voltages are about two orders of magnitude lower. Maximum substrate thickness, often an important consideration for X-ray and gamma-ray detection, is constrained by the electrode length rather than by material purity or depletion-depth limitations due to voltage breakdown. Maximum drift distance should no longer be a significant limitation for GaAs detectors fabricated with this technology, and collection times could be much less than one nanosecond. The ability of silicon detectors to operate in the presence of the severe bulk radiation damage expected at high-intensity colliders should also be greatly increased.
Published Version
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