Abstract
The authors have developed a Josephson 4 Kbit RAM with vortex transitional memory cells and resistor coupled drivers. The RAM is fabricated by 1.5 mu m Nb technology with approximately 21000 Nb/AlO/sub x//Nb Josephson junctions. 380 ps access time, 98.6% bit yield, and 9.5 mW power dissipation have been experimentally obtained in the 4 Kbit RAM chip. >
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