Abstract
Cu/Sn/Zn stacked layers were electrodeposited and subsequently annealed in a tube furnace in elemental sulfur and selenium at 570oC. Cyclic voltammogram of Sn-salt in ionic liquid was recorded. Thin films were characterized by inductively coupled plasma-mass spectrometry (ICP-MS), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). The device was characterized by current-voltage (I-V) and quantum efficiency (QE). The device fabricated using electrodeposited precursor film resulted in efficiencies of 3.6%.
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