Abstract
The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy (Hetero-ELO) yielded crack-free and low-dislocation-density AlGaN. The AlGaN over the grooves has a dislocation density as low as 2 × 107 cm–2 due to the lateral growth effect, in contrast with a high dislocation density of 5 × 109cm–2 over terrace region. We demonstrated a UV-laser diode grown on this low-dislocation-density AlGaN. The ridge stripes of the UV-LD were aligned on this low-threading-dislocation-region. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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