Abstract
High performance InP JFETs were fabricated for the first time by MOCVD using tertiary-butyl phosphine (TBP) as alternative for the phosphine source. Devices within a gate length of 1 μm showed very high transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, current density of >450 mA/mm with record high fT and fmax of 15 and 35 GHz, respectively.
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