Abstract
AbstractWe fabricated transparent oxide semiconductor‐based ambipolar TFTs on SiO2/c‐Si with a maximum process temperature of 250 °C. Saturation mobilities of ∼0.81 cm2(Vs)−1 for p‐channel and ∼5×10−4 cm2(Vs)−1 for n‐channel operations were obtained at RT. We demonstrated a complementary‐like inverter comprised of two SnO‐based ambipolar TFTs. The inverter operated with a maximum voltage gain of ∼2.5. This is the first demonstration of an oxide‐based complementary‐like inverter using a single channel material, which allows simple fabrication of complementary logic circuits based on oxide TFTs. In addition, the device operates stably in air, is optically transparent and can be fabricated at 250 °C. Therefore, the essence of our findings can further be extended to flexible substrates. We expect that optimization of processing and more appropriate selection of source/drain electrode materials will improve the n‐channel mobilities, and pave the way for oxide‐based complementary circuit technology.
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