Abstract
Mid-infrared (3-5 μm) diode lasers are important for a wide range of applications, including gas sensing. GaSb-based type-I quantum well (QW) diode lasers are attractive choices for this wavelength range, due to their temperature stability and relatively lower operating voltage. In turn, these properties yield lower power consumption at threshold than quantum cascade lasers and interband cascade lasers, which is essential for portable systems. Excellent diode lasers, based on GaInAsSb QWs and lattice-matched AlGaAsSb barriers/waveguide layers, have been demonstrated below ~3 μm with high wallplug efficiency and low threshold currents.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
